Historically, SSDs have been designed to fit in the same I/O interface as a hard disk drive [HDD], such as the SATA and the SAS interface, to connect to the host computer. Although most SSDs today use 3D TLC NAND-based flash memory, rapid developments in Non-volatile Memory Express [NVMe], NVMe over Fabrics [NVMe-oF], and storage-class memory [SCM] technologies offer tremendous potential in the data center.
NVMe is an interface protocol for accessing flash storage via a PCI Express [PCIe] bus. Unlike traditional all-flash architectures, which are limited to a single, serial command queue, NVMe supports tens of thousands of parallel queues, each with the ability to support tens of thousands of concurrent commands.
NVMe-oF is a host-side interface into storage systems that extends many of the relevant NVMe capabilities over a remote direct memory access [RDMA] or Fibre Channel fabric. With NVMe-oF, it is possible to scale out to large numbers of NVMe devices, even over distances.
SCM, also known as persistent memory [PMEM], is a new type of media technology that is blurring the line between memory and storage because it can be used as either. Examples of SCM include Intel’s 3D XPoint and Samsung’s Z-NAND media.
When broadly deployed, NVMe and NVMe-oF, especially in combination with SCM, can dramatically accelerate a new generation of applications, delivering 10x lower latency and maximum IOPS.
NetApp was the first to market with high-capacity 15TB SSDs based on 3D NAND technology. It is now leading the future of flash with a powerful vision of integrating the new flash storage systems based on NVMe, NVMe-oF, and SCM into the existing infrastructure nondisruptively.
Test Description
10 Questions MCQ Test | Test: Flash Memory
Test: Flash Memory for Electrical Engineering [EE] 2022 is part of Electrical Engineering [EE] preparation. The Test: Flash Memory questions and answers have been prepared according to the Electrical Engineering [EE] exam syllabus.The Test: Flash Memory MCQs are made for Electrical Engineering [EE] 2022 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Flash Memory below.
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Test: Flash Memory - Question 1
Flash memory is a non-volatile storage
device in which data
- A.
can be erased physically
- B.
can be erased magnetically
- C.
can be erased electrically
- D.
cannot be erased
Detailed Solution for Test: Flash Memory - Question 1
Flash memory is a electronic, solid state, non-volatile memory storage device which can be electrically erased and reprogrammed.
Test: Flash Memory - Question 2
NOR type flash allows ______ to be read or written independently
- A.
one machine cycle
- B.
one machine word
-
C.
one machine sentence
- D.
one bit
Detailed Solution for Test: Flash Memory - Question 2
NOR type flash allows a single machine word that is one byte to be written to an erased location or read independently.
Test: Flash Memory - Question 3
NAND type flash
memories are used in
- A.
memory cards
- B.
USB
- C.
solid state drivers
- D.
all of the mentioned
Detailed Solution for Test: Flash Memory - Question 3
NAND type flash memories operates primarily in memory cards, USB flash drives and solid state drivers.
Test: Flash Memory - Question 4
Which is comparatively slower device?
- A.
ROM
- B.
RAM
- C.
flash memory
- D.
SRAM
Detailed Solution for Test: Flash Memory - Question 4
Flash memory has fast read access time, but static RAM or ROM are comparatively faster than flash memory.
Test: Flash Memory - Question 5
Floating gate transistor in flash memory has
- A.
two gates
-
B.
one gate
- C.
two sources
- D.
two drains
Detailed Solution for Test: Flash Memory - Question 5
Floating gate transistor in flash memory has two gates. These two gates are – floating gate and control gate.
Test: Flash Memory - Question 6
In NOR type flash memory, each cell has one end connected to
- A.
source
- B.
drain
- C.
gate
- D.
ground
Detailed Solution for Test: Flash Memory - Question 6
In NOR type flash memory, each cell has one end connected directly to ground and other end connected to the bit line.
Test: Flash Memory - Question 7
In NOR type flash memory, data is erased
- A.
bitwise
- B.
bytewise
- C.
blockwise
- D.
sentence wise
Detailed Solution for Test: Flash Memory - Question 7
In NOR type flash memory the data can be erased only blockwise basis. all the cells in an erase segment must be erased together.
Test: Flash Memory - Question 8
The transistors in NAND type flash are connected in
- A.
series
- B.
parallel
- C.
cascade
- D.
randomly
Detailed Solution for Test: Flash Memory - Question 8
The NAND type flash memory also uses floating gate transistors and it is connected to form NAND gate. The transistors are connected in series.
Test: Flash Memory - Question 9
In NAND type flash, memory can be addressed bit-wise.
- A.
true
- B.
false
Detailed Solution for Test: Flash Memory - Question 9
In NAND type flash, memory can be addressed by word, page or even bit wise. In NOR type flash, memory can be addressedby page then word.
Test: Flash Memory - Question 10
The program erase cycle in flash memory is
- A.
finite
- B.
infinite
- C.
all of the mentioned
- D.
none of the mentioned
Detailed Solution for Test: Flash Memory - Question 10
One disadvantage of flash memory is that it has finite number of program-erase cycles. This limits the usage of flash memory.
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